12.12.2007 19:05 Uhr, Quelle: MacNN

Toshiba lays groundwork for 100Gb flash

Toshiba on Wednesday revealed that it has developed a new design process which should greatly increase the capacity of flash memory for future storage. Known as double tunnel layer technology, it brackets a layer of silicon nanocrystals that help store memory between a pair of tunnel oxide layers that help control the flow of electricity in and ou

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