12.08.2009 00:50 Uhr, Quelle: MacNN

Yale University, SRC develop next-gen DRAM

Semiconductor Research Corporation (SRC) together with researchers at Yale University researchers on Tuesday announced they have found a way to significantly increase performance of DRAM chips. The improvements stem from using ferroelectric layers that no longer requires the use of a storage capacitor found in conventional DRAM cells. Called Ferroelectric DRAM (FeDRAM), the cells would have a cell

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