22.09.2009 08:35 Uhr, Quelle: Hardmac.com

Flash memory engraved at 20nm in second half of 2010

Recently the manufacturers of flash memory started to move their production towards engraving at 34nm. This is this new engraving size that, for example, allows Intel to lower the price of its 80 and 16B GB SSDs and of soon being able to offer one at 320 GB. But in this field everything moves very quickly. Toshiba and Sandisk, who are partners in the production of NAND Flash memory, announced that they intended to move to production of memory engraved at 20nm in the second half of 2010.This race with the engraving size is also that of the leadership in the market of the SSD. Such chips would make it possible to propose SSD disks of small capacity (around the 80 GB) at prices in the order of $150 and also to produce for the top of the range disks of more than 500 GB. These two players have another asset in their hands, MLC memory able to store 3 bits per cell, against 2 for the usual products, that will further increase the capacity of the memory chi

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