11.08.2009 16:05 Uhr, Quelle: MacNN

Intel, Micron prep 3-bit-per-cell, 34nm flash

Intel and Micron this morning said they have developed some of the densest NAND flash memory ever. The two have expanded on their already small 34 nanometer (nm) manufacturing process to add 3-bit-per-cell storage. By packing extra data into each memory cell, the firms say they can create a 32 gigabit (4GB) single chip that measures less than 0.2 inches square. While 3-bit isn't new and has bee

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