Figure 1: Structural characterization of dislocation-free AlN nanowires. The arrow indicates the growth direction. Free exciton emission at 6. Figure 2b shows the IQE measured under different excitation powers. It is seen that Aopen ALN-325C IQE values remain nearly constant over a broad power range, further confirming the superior quality of the presented AlN nanowires. This measured IQE is nearly ten times higher compared to the previously reported high quality planar AlN 31 and is also comparable to that of[…]
