Source : TgdailyFlash memory has become over the past 5 years the reference as a power efficient, user friendly and versatility storage space unit. And the future development of SSD based on NAND chips will maintain the exponential growth of this market. However, flash memory is not the ultimate system, and research labs are working on its successor for our future storage unit.
Scientists from the University of Pennsylvania have developed a new variant of phase change memory. As indicated by the name, a physical change of a component is taken as a reference to translate read/write function. They used physical abilities of self-assembling nanowire of germanium antimony telluride able to phase switch between amorphous and crystalline structures. They could evaluate that such memory would be about 1,000 fold faster than AND chips to copy and retrieve data, while allowing an estimated lifetime of 100,000 years.
