Source : CDR InfoSamsung announced that the production of chips of 512 MB of PRAM (a non-volatile memory based on a phase change in glass from amorphous to crystaline state) engraved in 65 nm will start in first half of 2009.
This memory has the role to replace Flash NAND in the future. Contrary to the traditional memory, the 0 and the 1 are materialized by a phase change of the material. Its advantage is to be able to pass from one state to the other very quickly and without needing to set the cell to 0 before a rewrite, which allows a very significant performance gain at the time of writing the data. It has as other advantages: one is to have a lifespan 10 times greater than other memory chips.
However it remains limited by its lack of density since one can manufacture MLC memory chips containing 30 times more data.
[translation by crispin]
