Toshiba has announced higher density, faster memory chips in a new lineup of 43nm single-level cell (SLC) NAND flash memory, featuring 2GB, 4GB and 8GB individual chips. The 43 nanometer process allows Toshiba to deliver double the density of its previous 56nm process, while also delivering SLC speeds, which are approximately 2.5x faster than the more common, denser but historically slower MLC (Mu
