Samsung tonight pushed its DDR3 memory lineup forward with news of a new two-gigabit (256MB) module. Using a new 50 nanometer manufacturing process, the memory is twice as dense as before and enables RAM capacities that are still rare: a dual-die, error-corrected RAM stick can now hold as much as 16GB by stacking the chips. Notebooks should also see a boost with up to 4GB per stick in a thin pac
