17.07.2008 10:06 Uhr, Quelle: Engadget

Japan's AIST boasts of longer-life NAND flash memory

Filed under: Storage As we've seen, Japan's National Institute of Advanced Industrial Science and Technology (otherwise known as AIST) is a pretty prolific place and it, along with its cohorts at the University of Tokyo, are now boasting about a breakthough in NAND flash memory that could result in far longer lifespans. The key to that, it seems, is the use of ferroelectric gate field-effect transistors (or FeFETs, pictured above) as memory cells, which apparently not only "dramatically improves" the performance of NAND flash memory, but allows it to be programmed and erased more than 100 million times. What's more, the

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