06.02.2008 18:20 Uhr, Quelle: MacNN

SanDisk unveils 3-bit-per-cell, 43nm flash

SanDisk today used the International Solid-State Circuits Conference as the platform to announce two breakthroughs in flash memory that it claims could greatly increase the amount of storage in these devices. The California firm says it and co-developer Toshiba are the first to have produced a new type of NAND flash memory that can store three bit

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