As much of a breakthrough as magnetoresistive RAM might be for its ability to retain data while powered off, its susceptibility to leak currents while turned on has made it impractical as a replacement for cache-oriented memory like SRAM. Toshiba's new approach could almost literally turn the situation on its head. By magnetizing spin torque MRAM (ST-MRAM) in a direction perpendicular to the magnetic layer, Toshiba cuts off the avenues for
