01.02.2010 14:35 Uhr, Quelle: MacNN

Samsung produces 30nm, low-power DDR3 RAM

Samsung today unveiled a potential breakthrough in its Green DDR3 memory by developing its first examples built on a 30 nanometer (nm) process. The size shrink allows 2 gigabit (256MB) chips that use 30 percent less power than 50nm DDR3. In a typical notebook, Samsung estimates that a 4GB RAM stick with the new memory would consume just 3W of energy each hour and extend battery life that much further.

Weiterlesen bei MacNN

Digg del.icio.us Facebook email MySpace Technorati Twitter

JustMac.info © Thomas Lohner - Impressum - Datenschutz