Samsung tonight said it has started mass production of two variants of its 30 nanometer NAND flash memory. Leading off is relatively new DDR (double data rate), multi-level cell NAND memory; like DDR RAM, it puts through twice as much data in a given cycle and promises to be much faster than historically slow NAND chips. The Korean company goes so far as to claim more than three times the speed, estimating that a single DDR multi-level cell NAND chip could read data at a peak 133Mbps versus 40Mbps for its old equivalent.
